isc Silicon NPN Darlington Power Transistor TIP132 is a high DC current gain and low collector-emitter saturation voltage transistor designed for general-purpose amplifier and low-speed switching applications.
The TIP132 is a silicon NPN Darlington power transistor designed for general‑purpose amplifier and low‑speed switching applications. It offers high DC current gain (hFE ≥ 1000 at 4 A) and can handle collector currents up to 12 A peak.
The datasheet lists absolute maximum ratings such as VCEO = 100 V, VCESAT = 2.0 V at 4 A, continuous collector current 8 A, and power dissipation up to 70 W. Thermal characteristics include a junction‑to‑case resistance of 1.785 °C/W and a junction‑to‑ambient resistance of 63.5 °C/W, with a storage temperature range of –65 °C to 150 °C.
| DC Current Gain (hFE) min | 1000 @ Ic=4A |
|---|---|
| Collector‑Emitter Sustaining Voltage (VCEO) | 100 V (Min) |
| Collector‑Emitter Saturation Voltage (VCESAT) | 2.0 V @ Ic=4A |
| Continuous Collector Current | 8 A |
| Peak Collector Current | 12 A |
| Base Current Continuous | 0.3 A |
| Power Dissipation | 70 W |
| Maximum Junction Temperature | 150 °C |
| Storage Temperature Range | -65 °C to 150 °C |
| Thermal Resistance Junction‑to‑Case | 1.785 °C/W |
| Thermal Resistance Junction‑to‑Ambient | 63.5 °C/W |
The collector‑emitter saturation voltage is 2.0 V when the collector current is 4 A.
The transistor’s collector‑emitter sustaining voltage rating is 100 V (minimum).
The minimum DC current gain (hFE) is 1000 at a collector current of 4 A.