2SD1407 is a power transistor produced by Inchange Semiconductor. Its main features are: high breakdown voltage, low emitter saturation voltage. It is suitable for power amplifier applications.
The 2SD1407 is a silicon NPN power transistor offered in a TO‑220Fa package. It features a high breakdown voltage, low collector saturation voltage, and is intended for power‑amplifier applications.
The document lists absolute maximum ratings such as 100 V collector‑emitter voltage, 5 A collector current, and 30 W power dissipation, as well as typical performance figures like a DC current gain of about 40 and a transition frequency of 12 MHz. Package dimensions and characteristic curves (static, safe operating area) are also included.
| Collector‑emitter breakdown voltage (VCEO) | 100 V |
|---|---|
| Collector‑emitter saturation voltage (VCE(sat)) | 2.0 V |
| Base‑emitter voltage (VBE) | 1.5 V |
| Collector current (Ic) | 5 A |
| Power dissipation (Pd) | 30 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55~150 °C |
| DC current gain (hFE) typical | ≈ 40 |
| Transition frequency (ft) | 12 MHz |
| Collector output capacitance (Coss) | 100 pF |
The transistor can handle up to 5 A of collector current.
It is rated for a collector‑emitter breakdown voltage of 100 V.
The device is supplied in a TO‑220Fa package.
The typical DC current gain is about 40 at Ic = 1 A and VCE = 5 V.