This document describes the features and characteristics of the INCHANGE Semiconductor isc N-Channel MOSFET transistor STP75NF75, including maximum drain current, drain-source voltage, and static drain-source on-resistance. This transistor is suitable for advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any application with low gate drive requirements.
The STP75NF75 is an N‑Channel MOSFET designed for use as a primary switch in high‑efficiency, high‑frequency isolated DC‑DC converters and other demanding applications such as solenoid drivers, relay drivers, and DC motor control. It is offered in a TO‑220 package with a gate, drain, and source pin configuration.
Key ratings include a continuous drain current of 80 A at 25 °C, a drain‑source voltage rating of 75 V, on‑resistance of 0.011 Ω (max), and a total power dissipation of 300 W. The device also supports a gate‑source voltage of +20 V, operates up to a junction temperature of 175 °C, and is rated for storage temperatures from –55 °C to 175 °C.
| Continuous Drain Current (I_D) | 80 A @ 25 °C |
|---|---|
| Drain‑Source Voltage (V_DSS) | 75 V (min) |
| Total Power Dissipation (P_D) | 300 W @ 25 °C |
| Gate‑Source Voltage (V_GS) | +20 V (continuous) |
| Maximum Junction Temperature (T_J) | 175 °C |
| Storage Temperature Range | -55 °C to 175 °C |
The device can handle a continuous drain current of 80 A at a case temperature of 25 °C.
The STP75NF75 is rated for a minimum drain‑source breakdown voltage of 75 V.