Inchange Semiconductor provides TIP125/126/127 Silicon PNP Darlington Power Transistors with high DC current gain, low collector saturation voltage, and are suitable for general purpose amplifier and low speed switching applications.
The Inchange Semiconductor TIP125/126/127 series are silicon PNP Darlington power transistors offered in a TO‑220C package. They provide high DC current gain, low collector saturation voltage, and are suited for general‑purpose amplifier and low‑speed switching applications.
The document lists absolute maximum ratings, electrical characteristics such as collector‑emitter voltage, saturation voltages, base‑emitter voltage, and current limits, as well as package outline dimensions and safe operating area curves.
| Collector‑Base Voltage (Vcbo) | -80 V (TIP126) |
|---|---|
| Collector‑Emitter Saturation Voltage Vcesat‑1 | -2.0 V (TIP126, Ic=-3 A, Ip=-12 mA) |
| Collector‑Emitter Saturation Voltage Vcesat‑2 | -4.0 V (TIP126, Ic=-5 A, Ip=-20 mA) |
| Base‑Emitter On‑Voltage (Vbe) | -2.5 V (TIP125) |
| Collector Current DC (Ic) | 5 A |
| Collector Current Pulse (Ic‑pulse) | 8 A |
| Base Current DC (Ib) | -120 mA |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -65 °C to 150 °C |
The transistors can handle up to 5 A continuous collector current and 8 A pulse collector current.
TIP126 has a Vcesat‑1 of –2.0 V at Ic = –3 A, Ip = –12 mA, and a Vcesat‑2 of –4.0 V at Ic = –5 A, Ip = –20 mA.
They are supplied in a TO‑220C package.