INCHANGE Manuals

This document describes the features and characteristics of the INCHANGE SEMICONDUTOR Adjustable Voltage Regulator LM317T, including TO-220 package, output voltage range of 1.2V to 37V, output current in excess of 1.5A, etc.

This document is a product specification for the TIP120/121/122 series of silicon NPN Darlington power transistors produced by Inchange Semiconductor.

Inchange Semiconductor provides TIP125/126/127 Silicon PNP Darlington Power Transistors with high DC current gain, low collector saturation voltage, and are suitable for general purpose amplifier and low speed switching applications.

Inchange Semiconductor TIP125/126/127 Product Specification, includes product type, features and parameters.

isc Silicon NPN Darlington Power Transistor TIP130 is a power transistor launched by isc company. It has the characteristics of high current gain, low collector-emitter saturation voltage, etc. It is suitable for general-purpose amplifiers and low-speed switching applications

isc Silicon NPN Darlington Power Transistor TIP132 is a high DC current gain and low collector-emitter saturation voltage transistor designed for general-purpose amplifier and low-speed switching applications.

This document describes the features and characteristics of the INCHANGE Semiconductor isc N-Channel MOSFET transistor STP75NF75, including maximum drain current, drain-source voltage, and static drain-source on-resistance. This transistor is suitable for advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any application with low gate drive requirements.

This document describes the product specifications and characteristics of Inchange Semiconductor's 2SC1004 Silicon NPN Power Transistors. The transistor is packaged in TO-3 and has a high breakdown voltage. It is suitable for use in the horizontal deflection output stages of color TV receivers. The main features include: collector-base breakdown voltage of 1100V, collector-emitter breakdown voltage of 700V, emitter-base breakdown voltage of 5V, maximum collector current of 0.5A, maximum power dissipation of 50W, and operating temperature range of -55°C to 150°C.

2SD1407 is a power transistor produced by Inchange Semiconductor. Its main features are: high breakdown voltage, low emitter saturation voltage. It is suitable for power amplifier applications.