Inchange Semiconductor TIP125/126/127 Silicon PNP Darlington Power Transistors Datasheet


Inchange Semiconductor TIP125/126/127 Silicon PNP Darlington Power Transistors Datasheet - cover page
Brand
INCHANGE
Category
component datasheet
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
184 KB
Published
28 March, 2012
Updated
29 September, 2023
MD5 checksum
EBD420BEBDD91E642A693EF9186BD817

About this manual

The TIP125, TIP126, and TIP127 are silicon PNP Darlington power transistors offered by Inchange Semiconductor. They are designed for general‑purpose amplifier and low‑speed switching applications and feature high DC current gain, low collector saturation voltage, and a TO‑220C package.\n\nKey specifications include collector‑emitter voltages up to –100 V, collector currents up to 5 A DC, base current limits of –120 mA, and a junction temperature rating of 150 °C. The datasheet also provides absolute maximum ratings, characteristic curves, and package dimensions.

What's inside

  • Description
  • Applications
  • Pinning
  • Characteristics
  • Absolute Maximum Ratings
  • Package Outline
  • Safe Operating Area

Specifications

Collector current (DC)5 A
Base current (DC)-120 mA
Junction temperature150 °C
PackageTO-220C

Frequently asked questions

What is the maximum collector current for the TIP125?

The TIP125 can handle up to 5 A DC collector current.

What package type are the TIP125/126/127 transistors housed in?

They are supplied in a TO‑220C package.

What is the base current rating for these transistors?

The maximum DC base current is -120 mA.

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