This document is a product specification for the TIP120/121/122 series of silicon NPN Darlington power transistors produced by Inchange Semiconductor.
The TIP120/121/122 series are silicon NPN Darlington power transistors offered in a TO‑220C package. They are intended for general‑purpose amplifier and low‑speed switching applications and complement the TIP125/126/127 series.
Key specifications include collector‑base voltages of 60 V (TIP120), 80 V (TIP121) and 100 V (TIP122), collector‑emitter saturation voltages as low as 2.0 V (TIP121) and 4.0 V (TIP122), a DC current gain of 1000, and a maximum collector current of 5 A (DC) with 8 A pulse capability. The device is rated for a junction temperature of 150 °C and a storage range of –65 °C to 150 °C.
| Collector‑base voltage (Vso) TIP121 | 80 V |
|---|---|
| Collector‑emitter saturation voltage (Vce(sat)-1) TIP121 | 2.0 V |
| Collector‑emitter saturation voltage (Vce(sat)-2) TIP122 | 4.0 V |
| Base‑emitter on voltage TIP121 | 2.5 V |
| Collector current (DC) TIP120 | 5 A |
| Base current (DC) | 120 mA |
| Junction temperature (Tj) | 150 °C |
| DC current gain (hFE) | 1000 |
| Output capacitance | 200 pF |
All three devices have a DC current gain of approximately 1000.
TIP121 has a collector‑emitter saturation voltage of about 2.0 V at Ic = 3 A.