K4S64323LH is a synchronous high-speed dynamic RAM with features of low power consumption, high bandwidth, and high performance. It is fabricated with SAMSUNG's high-performance CMOS technology and has features such as LVCMOS compatibility, multiplexed address, four banks operation, CAS latency, burst length, burst type, etc.
The K4S64323LH is a 512K × 32‑bit mobile SDRAM organized in four banks and packaged in a 90‑ball FBGA. It supports 2.5 V power, LVCMOS‑compatible multiplexed address, and offers programmable burst lengths, CAS latencies, and special functions such as Partial Array Self‑Refresh (PASR) and internal Temperature‑Compensated Self‑Refresh (TCSR).
The document provides absolute maximum ratings, recommended DC and AC operating conditions, pin configuration, timing parameters, and power‑up and burst sequences. It also lists temperature ranges (commercial and extended), refresh periods, and electrical characteristics such as supply voltage limits, leakage currents, and capacitance values.
| Memory capacity | 512K × 32‑bit × 4 banks |
|---|---|
| Supply voltage | 2.5 V |
| Operating frequency (example) | 105 MHz (CL=2) |
| Package type | 90‑ball FBGA, 0.8 mm pitch |
| CAS latency options | 1, 2, 3 |
| Burst length options | 1, 2, 4, 8, Full page |
| Temperature range (commercial) | -25 °C to 70 °C |
| Temperature range (extended) | -25 °C to 85 °C |
| Refresh period | 64 ms (4K cycle) |
| Power dissipation | 1.0 W |
| Input leakage current | -10 µA to 10 µA |
The device operates from a 2.5 V supply.
It supports commercial operation from –25 °C to 70 °C and extended operation from –25 °C to 85 °C.
CAS latency can be set to 1, 2, or 3.
The refresh period is 64 ms (4K cycle).