The S29GL-P MirrorBit ® Flash Family is a 3.0 volt-only page mode flash memory featuring 90 nm MirrorBit process technology. The products include capacities of 1 gigabit, 512 megabit, 256 megabit, and 128 megabit. This document is a preliminary version that describes the technical specifications and manufacturing process of the products.
The S29GL-P MirrorBit® Flash Family from Spansion includes 1 Gb, 512 Mb, 256 Mb and 128 Mb page‑mode flash memories fabricated on a 90 nm process. These devices operate at a single 3 V supply (2.7‑3.6 V) and feature fast access times, a write buffer, and secure sector protection.
The datasheet details performance characteristics such as read access times, current consumption, erase cycles, and retention, as well as electrical specifications, package options (56‑pin TSOP and 64‑ball Fortified BGA), command sets, and power‑conservation modes. It also provides ordering information, block diagrams, and protection scheme tables for designers.
| Operating voltage range | 2.7‑3.6 V |
|---|---|
| Page read buffer size | 8‑word / 16‑byte |
| Write buffer size | 32‑word / 64‑byte |
| Typical erase cycles per sector | 100,000 |
| Typical data retention | 20 years |
| Random‑access read current (5 MHz) | 30 mA |
| Program/Erase current | 50 mA |
| Standby current | 1 pA |
| Sector erase time (64 Kword) | 0.5 s |
| Single word programming time | 60 µs |
The device operates from 2.7 V to 3.6 V, using a single 3 V supply for read, program and erase.
Each sector is rated for about 100,000 erase cycles typical.
The standby current is typically 1 pA.