This data sheet introduces the features and characteristics of S29GLxxxA MirrorBit™ Flash Family S29GL064A, S29GL032A 64 Megabit, 32 Megabit 3.0, Volt-only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology products that are under development at Spansion LLC.
The S29GL064A and S29GL032A are 3.0 V single‑power flash memory devices fabricated with 200 nm MirrorBit technology. The 64‑Mb part is organized as 4,194,304 words (8,388,608 bytes) and the 32‑Mb part as 2,097,152 words (4,194,304 bytes). They support 8‑bit or 16‑bit data bus configurations and include features such as program/erase suspend‑resume, accelerated program, and a secured silicon sector for permanent protection.
Both devices are offered in multiple packages, including 48‑pin TSOP, 56‑pin TSOP, 48‑ball fine‑pitch BGA and 64‑ball fortified BGA. Power consumption is low, with typical active read current of 18 mA, erase/program current of 50 mA, and standby current of 1 µA. Typical endurance is 100 k erase cycles per sector and 20‑year data retention.
| Access time | 90 ns |
|---|---|
| Supply voltage | 3.0 V single‑power |
| Active read current (typical) | 18 mA |
| Erase/program current (typical) | 50 mA |
| Endurance | 100 k erase cycles per sector |
| Data retention | 20 years (typical) |
| Page read buffer | 4‑word / 8‑byte |
| Write buffer | 16‑word / 32‑byte |
| Package options | 48‑pin TSOP, 56‑pin TSOP, 48‑ball fine‑pitch BGA, 64‑ball fortified BGA |
The devices have an access time of 90 ns.
Both parts operate from a single 3.0 V power supply.
Typical endurance is 100 k erase cycles per sector.