ZXMN10A11K 100V DPAK N-channel enhancement mode MOSFET is a low on-resistance and fast switching MOSFET, which is ideal for high efficiency power management applications.
The ZXMN10A11K is a trench MOSFET offered by Zetex in a DPAK package. It combines low on‑resistance, fast switching speed and a low gate‑drive threshold, making it suitable for high‑efficiency power‑management applications such as DC‑DC converters, disconnect switches and motor control.
The document provides absolute maximum ratings, electrical and thermal characteristics, typical transfer curves, and detailed package dimensions. Ordering information, contact details for Zetex sales offices worldwide, and safety notices are also included.
| Drain‑source voltage (VDS) | 100 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) @ 25 °C | 3.5 A |
| Pulsed drain current (ID,pulse) | 9.9 A |
| On‑resistance RDS(on) @ VGS=10 V | 0.350 Ω |
| On‑resistance RDS(on) @ VGS=6 V | 0.450 Ω |
| Input capacitance (Ciss) | 274 pF |
| Output capacitance (Coss) | 21 pF |
| Total gate charge (Qg) | 5.4 nC |
| Package type | DPAK |
The device is rated for a maximum drain‑source voltage of 100 V.
The on‑resistance is 0.350 Ω when VGS = 10 V.
It is supplied in a DPAK surface‑mount package.
The continuous drain current is 3.5 A at 25 °C.