The PHU11NQ10T is a Philips TrenchMOS™ standard level FET featuring fast switching and low on-state resistance, and is suitable for applications such as relay drivers, high speed line drivers, and general purpose switches.
The PHU11NQ10T is an N‑channel enhancement mode field‑effect transistor fabricated with Philips' TrenchMOS technology and supplied in a SOT‑533 (I‑pak) plastic package. It is intended for use as a relay driver, high‑speed line driver, or general‑purpose switch.
Key data include a maximum drain‑source voltage of 100 V, a continuous drain current of 10.9 A, a total power dissipation of 57.7 W, and typical on‑state resistance around 150 mΩ. Thermal resistance values and storage temperature ranges are also specified for reliable operation.