PMWD15UN Dual N-channel µTrenchMOS™ ultra low level FET is a surface mount low power dual diode produced by Philips Semiconductors. This device has low voltage, low power, low threshold and fast switching characteristics. It is suitable for applications such as portable appliances, PCMCIA cards, battery management and load switching.
The PMWD15UN is a dual N‑channel enhancement‑mode field‑effect transistor built with TrenchMOS™ technology and supplied in a plastic TSSOP‑8 (SOT530‑1) package. It is intended for portable appliances, PCMCIA cards, battery management and load‑switching applications.
The document details pin configurations, ordering information, absolute maximum ratings, thermal characteristics, electrical characteristics and package outline, allowing designers to evaluate the device for their circuits.
| Output capacitance (Coss) | 280 pF |
|---|---|
| Reverse transfer capacitance (Crss) | 190 pF |