This is a Fairchild Semiconductor datasheet for the BAS21 general purpose high voltage diode, sourced from Process 1H (the text refers to MMBD1401 for characteristics). It begins with a SOT-23 connection diagram and then lists absolute maximum ratings, thermal characteristics and electrical characteristics at a junction temperature of 25 °C unless otherwise noted.
The document closes with the Fairchild trademark list, a disclaimer, the life support policy and the product status definitions (Advance Information, Preliminary, Full Production, Obsolete). All values are stated for a maximum junction temperature of 150 °C, and the ratings are described as steady state limits.
| Working Inverse Voltage | 250 V |
|---|---|
| Average Rectified Current | 200 mA |
| DC Forward Current | 600 mA |
| Recurrent Peak Forward Current | 700 mA |
| Peak Forward Surge Current | 1.0 A (pulse width = 1.0 second); 2.0 A (pulse width = 1.0 microsecond) |
| Storage Temperature Range | -55 to +150 °C |
| Operating Junction Temperature | 150 °C |
| Total Device Dissipation | 350 mW |
| Thermal Resistance, Junction to Ambient | 357 °C/W |
| Reverse Voltage Leakage Current | 100 nA max at VR = 200 V |
| Forward Voltage | 1.0 V max at 100 mA; 1.25 V max at 200 mA |
| Diode Capacitance | 5.0 pF max at VD = 0, f = 1.0 MHz |
| Reverse Recovery Time | 50 ns |
| Package | SOT-23 |
The working inverse voltage is 250 V, and the breakdown voltage is also listed as 250 V min at 100 µA.
Average rectified current is 200 mA, DC forward current is 600 mA and recurrent peak forward current is 700 mA.
The operating junction temperature is 150 °C, and the storage temperature range is -55 to +150 °C.
The connection diagram shows the BAS21 in a SOT-23 package.