The document describes the features and characteristics of IKW40T120 TrenchStop series power semiconductors. The device uses TrenchStop and Fieldstop technology and is equipped with a soft, fast recovery anti-parallel EmCon HE diode. It is designed for applications such as frequency converters and uninterrupted power supply. It offers very tight parameter distribution and high ruggedness with temperature stable behavior. The NPT technology allows for easy parallel switching due to positive temperature coefficient in VCE(sat). The device has low EMI, low gate charge, and a very soft, fast recovery anti-parallel EmCon HE diode. It is qualified according to JEDEC1 standards and is lead-free and RoHS compliant.
The IKW40T120 belongs to Infineon's TrenchStop® series of high‑voltage IGBTs. It combines low loss, low gate charge and a soft, fast‑recovery anti‑parallel EmCon HE diode, making it suitable for frequency converters and UPS applications. The device is qualified to JEDEC standards, RoHS compliant and available in a 1200 V, 40 A rating.
Key electrical parameters include a collector‑emitter voltage of 1200 V, a short‑circuit withstand time of 10 µs, and a power dissipation capability of 270 W at 25 °C. Thermal resistance values are 0.45 K/W (junction‑to‑case) for the IGBT and 0.81 K/W for the diode, ensuring stable operation over a wide temperature range.
| Collector‑emitter voltage (VCE) | 1200 V |
|---|---|
| Maximum collector current (IC) | 40 A |
| Gate‑emitter voltage (VGE) | +20 V |
| Power dissipation (PD) | 270 W (at 25 °C) |
| Thermal resistance, junction‑to‑case (RthJC) | 0.45 K/W |
| Short‑circuit withstand time | 10 µs |
The device is rated for a collector‑emitter voltage of 1200 V.
It can endure a short circuit for up to 10 µs.
The IGBT can dissipate up to 270 W at a junction temperature of 25 °C.
The gate‑emitter voltage rating is +20 V.