2N5210/MMBT5210 is an NPN general purpose amplifier designed for low noise, high gain, general purpose amplifier applications with collector currents ranging from 1µA to 50 mA.
The 2N5210/MMBT5210 is an NPN general‑purpose amplifier designed for low‑noise, high‑gain applications with collector currents from 1 µA to 50 mA. The datasheet lists absolute maximum ratings such as a 50 V collector‑emitter voltage and a continuous collector current of 100 mA, as well as thermal characteristics including a junction‑to‑case resistance of 83.3 °C/W.
Typical characteristics are presented with graphs of collector‑current versus voltage, small‑signal parameters, noise figure, and common‑emitter curves. Additional sections cover ON/OFF characteristics, small‑signal gain‑bandwidth product, and device status definitions.
| Collector‑Emitter Voltage (VCEO) | 50 V |
|---|---|
| Collector‑Base Voltage (VCBO) | 50 V |
| Emitter‑Base Voltage (VEBO) | 45 V |
| Continuous Collector Current (IC) | 100 mA |
| Total Device Dissipation (PD) | 625 mW |
| Derate above 25 °C | 5.0 mW/°C |
| Thermal Resistance Junction‑to‑Case (RθJC) | 83.3 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 200 °C/W |
| DC Current Gain (hFE) at IC=1 mA | 200‑600 |
| Noise Figure (NF) at 20 µA | 2.0 dB |
The maximum collector‑emitter voltage is 50 V.
The device can handle a continuous collector current of 100 mA.
The DC current gain (hFE) ranges from 200 to 600 under the specified test conditions.
The junction‑to‑case thermal resistance is 83.3 °C/W.