Infineon BAR66 Silicon PIN Diode Array Datasheet

BAR66 is a silicon PIN diode array produced by ST company, and it is used for surge overvoltage clamping. Its maximum reverse voltage is 150V, maximum forward current is 200mA, maximum power is 250mW, and the operating temperature range is -55 to 125 degrees.


Infineon BAR66 Silicon PIN Diode Array Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
424 KB
Published
06 April, 2012
Updated
01 October, 2023
MD5 checksum
A7344176524853AC1B3A670B9F93B8A1

About this manual

The BAR66 is a silicon PIN diode array designed for surge over‑voltage clamping in antiparallel connection. The datasheet provides key electrical parameters such as reverse voltage, forward current, power dissipation and temperature limits.

Thermal resistance, diode capacitance versus frequency, and permissible pulse load information are also included, helping designers evaluate performance under various operating conditions.

What's inside

  • Electrical Characteristics
  • Thermal Resistance
  • Diode Capacitance
  • Permissible Pulse Load
  • Maximum Ratings

Specifications

Diode reverse voltage (VR)150 V
Forward current (Ir)200 mA
Total power dissipation (Prot)250 mW
Junction temperature (Tj)150 °C
Operating temperature range (Top)-55 … 125 °C
Storage temperature (Tst)-55 … 150 °C
Junction‑to‑solder resistance (Rj)< 290 kΩ

Frequently asked questions

What is the maximum reverse voltage rating of the BAR66 diode?

The BAR66 diode can withstand a reverse voltage of up to 150 V.

What forward current can the BAR66 handle continuously?

It is rated for a continuous forward current of 200 mA.

What is the allowed operating temperature range for the BAR66?

The device operates from –55 °C to 125 °C.

How much power can the BAR66 dissipate?

The maximum power dissipation is 250 mW.

Download PDF (424 KB)

More Infineon Manuals


View all Infineon manuals →