BFR340F is a NPN silicon RF transistor manufactured by Texas Instruments. Its features are low voltage/low current operation, transistor frequency of 14GHz, high insertion gain, ideal for low current amplifiers and oscillators.
The BFR340F is an NPN silicon RF transistor designed for low‑voltage, low‑current applications such as amplifiers and oscillators. The document provides preliminary data, maximum ratings, and detailed electrical characteristics.
Additional sections cover AC characteristics, SPICE model parameters, noise figure, power gain, and thermal information, giving designers the data needed for circuit simulation and product integration.
| Collector‑emitter voltage (VCEO) | 6 V |
|---|---|
| Collector‑base voltage (VCBO) | 17 V |
| Collector current (IC) | 10 mA |
| Total power dissipation | 60 mW |
| Transition frequency (ft) | 14 GHz |
| DC current gain (hFE) typical | 100 |
| Noise figure (Fmin) | 1.15 dB |
| SPICE model IS parameter | 6.12 fA |
The maximum collector‑emitter voltage is 6 V.
The transistor’s transition frequency is 14 GHz.
The typical DC current gain (hFE) is about 100.
It can dissipate up to 60 mW of power.