IPW60R045CP is a CoolMOSTM Power Transistor with the world's best Rds,on, ultra-low gate charge, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, lead-free lead plating; RoHS compliant, specially designed for: Hard switching SMPS topologies.
The IPW60R045CP CoolMOS power transistor is designed for hard‑switching SMPS topologies, offering ultra‑low gate charge, extreme dv/dt capability, and high peak current. It features the best worldwide RDS(on) for a TO‑247 package and complies with RoHS and JEDEC standards.
The datasheet lists maximum ratings, thermal characteristics, static and dynamic electrical parameters, gate‑charge data, and typical output and capacitance curves. Package information, dimensions, and mounting torque specifications are also provided. This manual is written in Chinese.
| Continuous drain current (ID) | 44 A |
|---|---|
| Maximum on‑state resistance (RDS(on)) | 0.045 Ω |
| Maximum drain‑source voltage (VDS) | 650 V |
| Package type | TO‑247 |
| Junction‑to‑case thermal resistance (RthJC) | 0.29 K/W |
The continuous drain current ID is 44 A at a junction temperature of 25 °C.
The maximum on‑state resistance RDS(on) is 0.045 Ω.
The transistor can withstand a drain‑source voltage of up to 650 V.
It is supplied in a TO‑247 package.