BSP 298 is an N-channel enhancement mode small-signal field-effect transistor produced by STMicroelectronics. It features a high breakdown voltage (400V), large conduction current (0.5A), and fast switching speed (100ns).
This document details the specifications of the Infineon BSP 298 N‑channel SIPMOS small‑signal transistor. It includes maximum ratings such as continuous drain current, gate‑source voltage, and avalanche energy, as well as static and dynamic electrical characteristics.
The datasheet also presents typical output curves, safe operating area graphs, and mechanical dimensions for the SOT‑223 package. Package markings and tape‑and‑reel information are provided for manufacturing and assembly purposes.
| Gate‑source voltage (Vgs) | +20 V |
|---|---|
| Drain‑source breakdown voltage (Vdss) | 400 V |
| Input capacitance (Ciss) | 300 pF |
| Output capacitance (Coss) | 50 pF |
| Package type | SOT‑223 (Tape & Reel) |
The transistor is rated for a gate‑source voltage of up to +20 V.
The drain‑source breakdown voltage is specified as 400 V.
The device is supplied in a SOT‑223 package, available in tape‑and‑reel form.