The SPA07N60CFD CoolMOSTM power transistor features an intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc. It is designed for soft switching PWM stages, LCD and CRT TVs.
This datasheet presents the specifications of the Infineon SPAO7N60CFD CoolMOS power transistor, covering its electrical characteristics such as drain current, on‑state resistance, and gate charge, as well as thermal performance and safe operating area. The document also includes package dimensions and compliance information.
Key sections detail maximum ratings, dynamic characteristics, reverse diode parameters, and typical output curves, enabling designers to assess suitability for soft‑switching PWM stages and other high‑frequency applications.
| Continuous drain current (Id) | 6.6 A |
|---|---|
| Pulsed drain current (Id,pulse) | 17 A |
| Power dissipation (P_D) | 32 W |
| Drain‑source breakdown voltage (V_DSS) | 600 V |
| Input capacitance (Ciss) | 790 pF |
| Total gate charge (Qg) | 35‑47 nC |
The maximum continuous drain current is 6.6 A at 25 °C.
It is supplied in a PG‑TO220‑3‑31 fully isolated package.
The device can operate from –55 °C to 150 °C.