Infineon BTS 5210G Smart High-Side Power Switch Datasheet

The BTS 5210G is a smart high-side power switch with two channels, each with a switching resistance of 140mΩ. It provides current limiting, short circuit protection, overload protection, thermal shutdown, reverse battery protection, overvoltage protection, ground loss and Vbb loss protection and electrostatic discharge protection.


Infineon BTS 5210G Smart High-Side Power Switch Datasheet - cover page
Brand
Infineon
Category
Power Management
Document type
Datasheet
Language
English
Pages
14
File format
PDF
File size
312 KB
Published
06 April, 2012
Updated
30 September, 2023
MD5 checksum
4A81D44C091F4168C7BC4B2C89BC3533

About this manual

The BTS 5210G is a smart high‑side power switch with two channels that can be used in parallel. It integrates a charge‑pump MOSFET, CMOS‑compatible input, and diagnostic feedback, making it suitable for 12 V and 24 V grounded loads such as resistive, inductive, and capacitive loads.

Key features include very low standby current, built‑in short‑circuit, overload, over‑voltage, thermal shutdown, reverse‑battery, and ESD protection, as well as open‑load detection. The device is offered in a P‑DSO‑14 package and supports a wide operating voltage range of 5.5 V to 40 V.

What's inside

  • Product Summary
  • General Description
  • Basic Functions
  • Protection Functions
  • Pin Definitions
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Operating Parameters
  • Package and Ordering Code

Specifications

Operating voltage (Vob)5.5 V – 40 V
On‑state resistance (Ron)140 mΩ (single channel)
Nominal load current (Iload)2.4 A (single channel)
Current limitation6.5 A
PackageP‑DSO‑14

Frequently asked questions

What is the operating voltage range of the BTS 5210G?

The device operates from 5.5 V up to 40 V.

How many channels does the BTS 5210G have and can they be paralleled?

It has two independent channels that can be connected in parallel for higher current capability.

What is the on‑state resistance of a single channel?

The on‑state resistance is 140 mΩ per channel.

Download PDF (312 KB)

More Infineon Manuals


View all Infineon manuals →