SPU04N60S5 and SPD04N60S5 are Cool MOS™ power transistors, with a maximum rated voltage of 600V, a typical on-resistance of 0.95Ω, 4.5A of maximum continuous current and repetitive avalanche ratings
This document is a technical datasheet for the Infineon Technologies AG SPU04N60S5 and SPD04N60S5 Cool MOS Power Transistors. The devices are designed with ultra-low gate charge and extreme dv/dt ratings, available in P-TO251 and P-TO252 packages.
| Continuous drain current (Tj=25°C) | 45 A |
|---|---|
| Drain-source breakdown voltage | 600 V |
| Power dissipation (Tc = 25°C) | 50 W |
| Operating temperature range | -55... +150 °C |
| Drain-source on-state resistance (typical) | 0.95 Ohm |
| Gate threshold voltage (typical) | 4.5 V |
The maximum continuous drain current at a junction temperature of 25°C is 45 A.
The SPU04N60S5 and SPD04N60S5 are available in P-TO251 and P-TO252 packages.