IPP60R099CS is the latest generation of high voltage power MOSFETs from Infineon, making AC/DC power supplies more efficient, more compact, lighter and cooler. This is achieved by offering the lowest on-state resistance per package outline, the fastest switching speed and the lowest gate drive requirements of commercially available high voltage MOSFETs. CoolMOS CS is for server and other high power density ap- plications, enabling a technology for power supply systems with the highest efficiency, power density and smallest form factor.
The IPP60R099CS MOSFET is part of Infineon’s CoolMOS CS family, targeting server and high‑power‑density applications. It offers the lowest on‑state resistance per package, the fastest switching speed and the lowest gate‑drive requirements among commercially available high‑voltage MOSFETs.
Key features include worldwide best RDS(on) in a T0220 package, ultra‑low gate charge, extreme dv/dt rating, high peak current capability and JEDEC qualification. The device is suited for hard‑switching and zero‑voltage‑switching SMPS topologies as well as CCM PFC designs.
| RDS(on) (max) | 99 mΩ |
|---|---|
| Maximum Drain‑Source Voltage (VDS) | 600 V |
| Maximum Continuous Drain Current (ID) | 3 A |
| Maximum Power Dissipation (Ptot) | 255 W |
| Typical Gate Charge (Qg) | 0 nC |
| Package | PG‑T0220‑3 |
| Polarity | N‑channel |
The MOSFET is rated for a maximum VDS of 600 V.
It is supplied in the PG‑T0220‑3 (T0220) surface‑mount package.