The BFP 520 is a NPN silicon RF transistor from Siemens with a transition frequency of 45 GHz. It can be used for the highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V, as well as for oscillators up to 15 GHz.
The Siemens BFP 520 is an NPN silicon RF transistor designed for high‑gain low‑noise amplifiers up to 1.8 GHz and oscillators up to 15 GHz. It features a 45 GHz transition frequency, 0.95 dB noise figure and gold metalization for reliability.
The document provides maximum ratings, detailed DC and AC characteristics, S‑parameter tables, noise parameters, and a complete Berkeley‑SPICE 2G.6 model. Package information (SOT‑343) and recommended simulation guidelines are also included.
| Collector‑emitter voltage (VCEO) | 2.5 V |
|---|---|
| Collector‑base voltage (VBO) | 12 V |
| Emitter‑base voltage (VEB) | 1 V |
| Collector current (IC) | 40 mA |
| Base current (IB) | 4 mA |
| Maximum power dissipation | 100 mW |
| Transition frequency (fT) | 45 GHz |
| Noise figure (NF) | 0.95 dB |
| Gain | 20 dB |
The maximum collector‑emitter voltage is 2.5 V.
The transistor has a transition frequency of 45 GHz.
The typical noise figure is 0.95 dB.