BFP 420 is a Siemens NPN Silicon RF Transistor with a transition frequency of 25 GHz. It is suitable for high gain low noise amplifiers and oscillators up to 10 GHz.
The BFP 420 is a silicon NPN RF transistor designed for high‑gain, low‑noise amplifiers and oscillators up to 10 GHz. It features a gold‑metalized SOT‑343 package and is optimized for low noise figure (1.05 dB at 1.8 GHz) and high transition frequency (25 GHz).\n\nThe document lists maximum ratings, DC and AC electrical characteristics, noise and power‑gain parameters, S‑parameters, and a complete Berkeley‑SPICE 2G.6 model. It also includes package equivalent circuit details and simulation notes for both linear and non‑linear analysis.
| Collector‑emitter voltage (VCEO) | 45 V |
|---|---|
| Collector current (IC max) | 35 mA |
| Base current (IB max) | 3 mA |
| Transition frequency (fT) | 25 GHz |
| Noise figure at 1.8 GHz | 1.05 dB |
The maximum collector‑emitter voltage is 45 V.
The transistor has a transition frequency of 25 GHz.
The typical noise figure at 1.8 GHz is 1.05 dB.
A Berkeley‑SPICE 2G.6 Gummel‑Poon model is supplied.