This document describes the features and characteristics of the SIEGET 25 NPN Silicon RF Transistor from BFP 450 Semiconductor Group, including medium power amplifiers, compression point P-1dB, maximum available gain Gma, noise figure F, transition frequency fT, etc.
The Siemens BFP 450 is an NPN silicon RF transistor designed for medium‑power amplifier applications. It offers a transition frequency of 24 GHz, a maximum collector‑emitter voltage of 4.5 V, and a typical noise figure of 1.25 dB at 1.8 GHz.
The document provides detailed electrical characteristics, maximum ratings, S‑parameter tables, noise parameters, and a complete Berkeley‑SPICE 2G.6 model for circuit simulation, along with package equivalent circuit information.
| Transition frequency (f_T) | 24 GHz |
|---|---|
| Collector‑emitter voltage (V_CEO) | 4.5 V |
| Collector current (I_C) | 100 mA |
| Noise figure (F) at 1.8 GHz | 1.25 dB |
| Maximum available gain (G_ma) at 1.8 GHz | 14 dB |
The transition frequency is 24 GHz.
The transistor can withstand up to 4.5 V collector‑emitter voltage.
The typical noise figure is 1.25 dB at 1.8 GHz.
A Berkeley‑SPICE 2G.6 Gummel‑Poon model with all parameters is included.