BB639/BB659 is a silicon variable capacitance diode produced by Dinghao Semiconductor. It is mainly used for tuning the extended frequency band in VHF TV/VTR tuners. Its features are high capacitance ratio, low series inductance, low series resistance, and excellent uniformity and matching.
The Infineon BB639 and BB659 are silicon variable capacitance diodes intended for tuning extended frequency bands in VHF TV and VTR tuners. They feature a high capacitance ratio, low series inductance and resistance, and uniform matching due to an in‑line matching assembly.
The document provides maximum ratings, DC and AC electrical characteristics, capacitance values at various bias voltages and frequencies, capacitance ratios, and series resistance, along with temperature ranges for operation and storage.
| Diode reverse voltage (V_R) | 30 V |
|---|---|
| Peak reverse voltage (V_RM) | 35 V |
| Forward current (I_F) | 20 mA |
| Operating temperature range | -55 °C to 150 °C |
| Storage temperature range | -55 °C to 150 °C |
| Diode capacitance at Vp=1 V, f=1 MHz (typical) | 38.3 pF |
| Capacitance ratio C1/C2 at Vp=1 V, Vp=28 V, f=1 MHz (typical) | 14.7 |
| Series resistance at Vp=5 V, f=470 MHz | 0.65 Ω |
The maximum reverse voltage is 30 V.
They are rated for a forward current of 20 mA.
They operate from –55 °C up to 150 °C.
The typical capacitance is about 38.3 pF.