This document provides technical information and characteristics of the BB640 silicon variable capacitance diode produced by Dinghao. The diode is suitable for hyperband TV/VTR tuners and has a reverse voltage of 30V and forward current of 20mA. Its capacitance varies with different voltages and frequencies, and has a low temperature coefficient and reverse current.
The BB640 is a silicon variable capacitance diode intended for Hyperband TV/VTR tuners. It provides a tunable capacitance that varies with applied reverse bias voltage, making it suitable for frequency‑selective applications.
The document lists maximum ratings, electrical characteristics at 25 °C, and temperature‑dependent behavior of capacitance and reverse current. Typical values include a reverse voltage of 30 V, forward current of 20 mA, and capacitance ranging from about 62 pF at 1 V/1 MHz to 12 pF at 100 MHz.
| Reverse voltage (Ve) | 30 V |
|---|---|
| Peak reverse voltage (VRu) | 35 V |
| Forward current (If) | 20 mA |
| Operating temperature range | -55 °C to 150 °C |
| Storage temperature range | -55 °C to 150 °C |
| Capacitance at 1 V, 1 MHz (typical) | 62 pF |
| Capacitance at 2 V, 1 MHz (typical) | 47.5 pF |
| Series resistance (Rs) | 1.15 Ω |
The BB640 diode is rated for a reverse voltage of 30 V.
The diode can conduct up to 20 mA of forward current.
At 1 V and 1 MHz the typical capacitance is about 62 pF.
It operates from –55 °C up to 150 °C.