This datasheet lists the technical parameters of BB639C/BB659C silicon variable capacitance diodes
The BB639C and BB659C are silicon variable capacitance diodes intended for tuning the extended frequency band in VHF TV and VTR tuners. They offer a high capacitance ratio, low series inductance and resistance, and excellent uniformity due to an "in‑line" matching assembly procedure.
The datasheet lists maximum ratings such as a 30 V reverse voltage and 35 V peak reverse voltage, a forward current of 20 mA, and an operating temperature range from –55 °C to 150 °C. Electrical characteristics include diode capacitance values at various bias voltages and frequencies, capacitance ratios, and series resistance values for different diode sequences.
| Diode reverse voltage (Ve) | 30 V |
|---|---|
| Peak reverse voltage (Vem) | 35 V |
| Forward current (Ir) | 20 mA |
| Operating temperature range | -55 °C to 150 °C |
| Capacitance ratio (Cr4/Cr28) | 14.2 |
The maximum reverse voltage is 30 V, with a peak reverse voltage of 35 V.
The diodes are rated for a forward current of 20 mA.
They operate from –55 °C up to 150 °C.