This document describes the features and characteristics of the TLP296G model of TOSHIBA photocoupler. The photocoupler consists of a gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET, which can replace mechanical relays in many applications.
The TLP296G is a gallium arsenide infrared emitting diode optically coupled to a photo‑MOSFET in an 8‑lead DIP package. It functions as a bi‑directional switch that can replace mechanical relays in many electronic applications.
The document lists maximum ratings, recommended operating conditions, and detailed electrical characteristics such as a 400 V peak off‑state voltage, 5 mA trigger LED current, 100 mA on‑state current, 30 Ω on‑state resistance, and a 2500 Vrms isolation voltage. It also includes handling precautions and restrictions on product use.
| Peak off‑state voltage | 400 V (min) |
|---|---|
| Trigger LED current | 5 mA (max) |
| On‑state current | 100 mA (max) |
| On‑state resistance | 30 Ω (max) |
| Isolation voltage | 2500 Vrms (min) |
| Forward current (IF) | 50 mA |
| Reverse voltage (VR) | 5 V |
| Junction temperature (Tj) | 125 °C |
| Storage temperature range | -55 °C to 125 °C |
| Lead soldering temperature | 260 °C (10 s) |
| Supply voltage (Vbppb) | 320 V |
The peak off‑state voltage is 400 V minimum.
It provides an isolation voltage of 2500 Vrms minimum.
The maximum forward current (IF) is 50 mA.