TLP250 is a photocoupler suitable for IGBT or power MOS FET, with high isolation voltage and fast switching time.
The TLP250 is a GaAlAs light‑emitting diode and integrated photodetector packaged in an 8‑lead DIP. It is intended for gate‑driving circuits of IGBT or power MOSFET devices and includes an optional D4 configuration for VDE approval.
The document provides absolute maximum ratings, recommended operating conditions, electrical and switching characteristics, test circuit diagrams, and restrictions on product use, helping designers integrate the device safely into electronics such as computers, industrial robotics, and domestic appliances.
| Input threshold current (Ir) | 5 mA (max) |
|---|---|
| Supply voltage (Vcc) | 10‑35 V |
| Isolation voltage | 2500 Vrms (min) |
| Output current (Io) | 1.54 A (max) |
| Forward current (IF) | 20 mA |
| Peak output current (lopH) | -1.5 A |
The recommended supply voltage (Vcc) is 10 V to 35 V.
The device provides an isolation voltage of at least 2500 Vrms.
The input threshold current is limited to 5 mA (maximum).
The forward current (IF) is rated at 20 mA.