TLP251 is a photocoupler produced by Toshiba. It is suitable for the gate driving circuit of IGBT or power MOSFET.
The TLP251 is an 8‑lead DIP GaAs photocoupler that integrates a light‑emitting diode and a photodetector. It is intended for gate‑driving circuits of IGBTs or power MOSFETs, especially low‑power IGBTs (~15 A). The device provides high isolation and fast switching suitable for inverter applications.
Key electrical characteristics include a supply voltage range of 10‑35 V, an output current capability of up to +0.4 A, and a minimum isolation voltage of 2500 Vrms. Typical forward voltage is 1.6‑1.8 V, and propagation delay (tpLH) ranges from 0.25 to 1.0 µs. The recommended operating temperature spans –20 °C to 85 °C. Proper bypassing with a 0.1 µF ceramic capacitor between pins 5 and 8 is required for stable operation.
| Input threshold current | 5 mA (max) |
|---|---|
| Supply voltage (Vcc) | 10‑35 V |
| Output current (Io) | 0.4 A (max) |
| Isolation voltage | 2500 Vrms (min) |
| Propagation delay (tpLH) | 0.25‑1.0 µs |
| Package | 8‑lead DIP |
The device can source up to 0.4 A (maximum).
It provides a minimum isolation voltage of 2500 Vrms.
The recommended supply voltage is 10 V to 30 V, with an absolute maximum of 35 V.
The TLP251 is supplied in an 8‑lead DIP package.