The TLP251 is a GaAs light‑emitting diode and integrated photodetector packaged in an 8‑lead DIP. It is intended for gate‑driving circuits of IGBT or power MOSFET devices, offering direct gate drive capability for lower‑power IGBTs.
The document lists detailed electrical specifications, maximum ratings, switching characteristics, and recommended operating conditions, along with handling precautions and usage restrictions for safety and reliability.
| Input Threshold Current (Ip) | 5 mA (Max) |
|---|---|
| Supply Voltage (Voc) | 10‑35 V |
| Output Current (Ig) | 0.4 A (Max) |
| Isolation Voltage | 2500 Vrms (Min) |
| Forward Current (Ip) | 20 mA |
| Peak Output Current (IopH) | 0.4 A (Max) |
| Junction Temperature (Tj) | 125 °C |
| Supply Current (Ic) | 11 mA (Max) |
The device is rated for a minimum isolation voltage of 2500 Vrms.
The recommended supply voltage range is 10 V to 35 V.
The device can operate from –20 °C up to 85 °C.