TLP251 is a photocoupler from TOSHIBA. It is suitable for gate driving circuit of IGBT or power MOS FET.
The TLP251 is a GaAs light‑emitting diode and integrated photodetector packaged in an 8‑lead DIP. It is intended for gate‑driving circuits of IGBT or power MOSFET devices and can directly drive lower‑power IGBTs.
The document provides absolute maximum ratings, recommended operating conditions, electrical and switching characteristics, as well as safety and usage restrictions for reliable integration in electronic designs.
| Input threshold current (Ir) | 5 mA (max) |
|---|---|
| Supply voltage (Vcc) | 10 V – 35 V |
| Output current (Io) | 0.4 A (max) |
| Isolation voltage | 2500 Vrms (min) |
| Switching time (tpLH/tpHL) | 1 µs (max) |
The device is rated for a minimum isolation voltage of 2500 Vrms.
A supply voltage between 10 V and 30 V is typical, with an absolute maximum of 35 V.
The recommended operating temperature is from –20 °C to 85 °C.
The input threshold current is specified as 5 mA maximum.