The TLP250F is a GaAs light‑emitting diode and integrated photodetector optocoupler packaged in an 8‑lead DIP. It is intended for gate‑driving circuits of IGBT or power MOSFET devices and includes electrical parameters such as input threshold current, supply voltage, and isolation voltage.
The document lists detailed specifications, pin configuration, structural parameters, and safety restrictions. It also notes required external components, such as a 0.1 µF bypass capacitor, and outlines prohibited applications in safety‑critical equipment.
| Input Threshold Current | 5 mA (Max.) |
|---|---|
| Supply Voltage | 10 ~ 35 V |
| Output Current | 1.5 A (Max.) |
| Switching Time | tpHL, tpLH = 0.5 s (Max.) |
| Isolation Voltage | 2500 V (Min.) |
| Weight | 0.54 g |
| Creepage Distance | 8.0 mm (Min.) |
| Clearance | 8.0 mm (Min.) |
| Maximum Operating Insulation Voltage | 1140 Vpk |
| Highest Permissible Over Voltage | 6000 Vpk |
A 0.1 µF bypass capacitor must be connected between pin 8 and pin 5.
The device has a minimum isolation voltage of 2500 V and is UL‑recognized (UL1577) and VDE‑approved (DIN VDE0884/06.92).