The Toshiba TLP251F is a GaAs light‑emitting diode and integrated photodetector optocoupler offered in an 8‑lead DIP package. It is intended for gate‑driving circuits of IGBT or power MOSFET devices, with a direct‑drive capability for lower‑power IGBTs.
The document lists electrical characteristics such as input threshold current, supply voltage range, output peak current, switching time, and isolation voltage, as well as mechanical parameters like creepage distance and clearance. It also includes a truth table, pin configuration, and safety restrictions for proper use.
| Input Threshold Current | 5 mA (max) |
|---|---|
| Supply Current | 1 mA (max) |
| Supply Voltage | 10 V ~ 35 V |
| Output Peak Current | 0.4 A (max) |
| Switching Time | 1 µs (max) |
| Isolation Voltage | 2500 V (min) |
| Creepage Distance | 8.0 mm (min) |
| Clearance | 8.0 mm (min) |
| Package | 8‑lead DIP |
The TLP251F can deliver up to 0.4 A of output peak current.
The device provides a minimum isolation voltage of 2500 V.
The TLP251F operates with a supply voltage between 10 V and 35 V.
A 0.1 µF bypass capacitor should be connected between pin 8 and pin 5.