TLP251F is a photocoupler produced by Dinghao Company, suitable for gate driving circuit of IGBT or power MOSFET. It has characteristics such as input threshold current, supply current, output peak current, etc. Structural parameters include creepage distance, clearance, etc.
The TLP251F is a GaAs optocoupler that integrates an infrared LED and a photodetector in an 8‑lead DIP package. It is intended for gate‑driving circuits of IGBT or power MOSFET devices and can be used in general electronics applications such as computers, office equipment, and industrial robotics.
The document lists electrical parameters, mechanical dimensions, pin assignments, truth table, and safety restrictions. It also includes recommended operating ranges, isolation ratings, and handling precautions for reliable use.
| Supply voltage | 10~35 V |
|---|---|
| Output peak current | +0.4 A (max) |
| Isolation voltage | 2500 Vrms (min) |
| Maximum operating insulation voltage | 1140 VPK |
| Highest permissible over‑voltage | 6000 VPK |
| Input threshold current | 5 mA (max) |
| Creepage distance | 8.0 mm (min) |
| Clearance | 8.0 mm (min) |
| Package type | 8‑lead DIP |
| Weight | 0.54 g |
The recommended supply voltage is 10 to 35 V.
The device provides a minimum isolation voltage of 2500 Vrms.
It can deliver up to +0.4 A (maximum) as output peak current.
Both creepage and clearance distances are at least 8.0 mm.