TLP250 is a photocoupler suitable for gate driving circuit of IGBT or power MOS FET. It has features such as input threshold current, supply current, supply voltage, output current, switching time, and isolation voltage.
The TLP250 is a GaAlAs light‑emitting diode and integrated photodetector packaged in an 8‑lead DIP. It is intended for gate‑driving circuits of IGBT or power MOSFET devices, such as inverter applications for air conditioners.
The document lists absolute maximum ratings, recommended operating conditions, electrical and switching characteristics, test circuit examples, and usage restrictions. Key parameters include input threshold current, supply voltage range, isolation voltage, and peak output current.
| Input threshold current (Ir) | 5 mA (max) |
|---|---|
| Supply voltage (Vcc) | 10‑35 V |
| Isolation voltage | 2500 Vrms (min) |
| Output current (Io) | 1.54 A (max) |
| Forward current (IF) | 20 mA |
| Supply current (cc) | 11 mA (max) |
The recommended supply voltage (Vcc) is 10 V to 35 V.
The device has a minimum isolation voltage of 2500 Vrms.
The TLP250 is supplied in an 8‑lead DIP package.
The input threshold current is limited to 5 mA (maximum).