TLP209D is a photocoupler product from Toshiba. It adopts an arsenic-doped gallium infrared emitting diode and a photo-MOS FET optical coupling. The package is an 8-pin SOP. This product has the characteristics of low off-state current and low output pin capacitance, which is suitable for high-frequency measurement instruments.
The TLP209D is a gallium‑arsenide infrared emitting‑diode optocoupler that combines a photo‑MOS FET in a plastic SOP‑8 package. Its low off‑state current and low output capacitance make it suitable for high‑frequency measurement instruments and general electronics applications.
The document lists absolute maximum ratings, recommended operating conditions, and detailed electrical parameters such as forward current, isolation voltage, and switching times, along with safety and reliability notes for designers.
| Peak Off‑State Voltage | 200 V (min) |
|---|---|
| Trigger LED Current | 3 mA (max) |
| On‑State Current | 50 mA (max) |
| On‑State Resistance | 50 Ω (max) |
| Output Capacitance | 20 pF (max) |
| Isolation Voltage | 1500 Vrms (min) |
| Operating Temperature (recommended) | -20 °C to 60 °C |
The maximum forward current (IF) is 50 mA.
The recommended operating temperature range is –20 °C to 60 °C.
The device guarantees an isolation voltage of at least 1500 Vrms.
The typical supply voltage (Vpp) is up to 160 V.