The Toshiba TLP627 series includes the TLP627, TLP627‑2 and TLP627‑4 optocouplers, which combine a GaAs infrared emitting diode with a Darlington‑connected phototransistor. The devices are offered in 8‑lead (TLP627‑2) and 16‑lead (TLP627‑4) DIP packages and are UL‑ and BSI‑approved for use in general electronics applications.
The datasheet provides absolute maximum ratings, recommended operating conditions, detailed electrical characteristics, switching performance, and usage restrictions. It also outlines isolation voltage capabilities, current transfer ratios, and temperature ranges to aid designers in selecting the appropriate part for their circuits.
| Collector‑Emitter Voltage (VCEO) | 300 V (Min) |
|---|---|
| Current Transfer Ratio (CTR) | 1000 % (Min) |
| Isolation Voltage | 5000 Vrms (Min, 1 min) |
| Forward Current (IF) | Typical 16 mA, Max 25 mA |
| Supply Voltage (VCC) | Up to 200 V |
| Operating Temperature Range | -25 °C to 85 °C |
The device is rated for a minimum collector‑emitter voltage of 300 V.
It provides at least 5000 Vrms isolation for 1 minute (AC).
The CTR is specified as a minimum of 1000 %.
Typical forward current is 16 mA, with a maximum of 25 mA.