This document describes the features and characteristics of the BTW 68 (N) series Silicon Controlled Rectifiers from Dinghao, including high surge capability, high on-state current, high stability and reliability. This series of Silicon Controlled Rectifiers uses high-performance glass passivated technology and is designed for power supplies up to 400Hz on resistive or inductive load.
The BTW 68(N) family of silicon controlled rectifiers is described with high surge capability, high on‑state current and high stability. Absolute ratings include on‑state current values of 30 A (insulated) and 35 A (uninsulated) and a repetitive peak off‑state voltage range of 200 V to 1200 V.
The document details thermal resistances, gate characteristics, electrical parameters, and mechanical package dimensions. It also lists recommended mounting torque, cooling method, and weight, providing a comprehensive reference for designers and technicians.
| On‑state current (RMS) – insulated | 30 A |
|---|---|
| Repetitive peak off‑state voltage (VDRM) | 200 V‑1200 V |
| Thermal resistance, junction‑to‑ambient (Rth j‑a) | 50 °C/W |
| Gate supply current (Iq) | 100 mA |
| Maximum lead temperature for soldering | 230 °C |
| Package dimension A (min‑max) | 15.10 mm‑15.50 mm |
| Weight | 4.79 |
The insulated BTW 68 can handle a RMS on‑state current of 30 A.
The device is rated for a repetitive peak off‑state voltage from 200 V up to 1200 V.