This document describes the features and characteristics of STP7NB80 and STP7NB80FP, two N-channel 800V PowerMESH MOSFETs. It includes extremely high dv/dt capability, 100% avalanche tested, very low intrinsic capacitances, and minimized gate charge.
The PowerMESH™ MOSFET family from STMicroelectronics offers high‑voltage (800 V) N‑channel devices with low on‑resistance, minimized gate charge, and excellent avalanche and dv/dt capabilities. The devices are built using a patented MESH OVERLAY™ process and proprietary edge termination, delivering high current handling and fast switching for demanding applications.
Key specifications include a continuous drain current of 6.5 A at 25 °C, a total dissipation of 135 W, and thermal resistance values suitable for TO‑220 and TO‑220FP packages. Mechanical dimensions, thermal impedance curves, and detailed electrical characteristics such as gate charge and capacitances are provided for design engineers.
| Drain‑source Voltage (VDS) | 800 V |
|---|---|
| Junction‑to‑ambient Thermal Resistance (RθJA) | 62.5 °C/W |
| Output Capacitance (Coss) | 180 pF |
The maximum drain‑source voltage is 800 V.