STP7NB60/FP N-CHANNEL 600V - 1.0 Ω - 7.2A TO-220/TO-220FP PowerMESH™ MOSFET is an advanced family of power MOSFETs with outstanding performances designed by STMicroelectronics. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
The handbook describes the STP7NB60 and STP7NB60FP PowerMESH™ N‑channel MOSFETs, highlighting their high voltage (600 V) capability, low on‑resistance, and robust avalanche performance. It includes general features, absolute maximum ratings, thermal data, avalanche characteristics, and detailed electrical parameters.
Key specifications such as drain‑source voltage, continuous drain current, on‑resistance, and package dimensions are presented in tables, along with mechanical drawings of the TO‑220 and TO‑220FP packages. The document also lists recommended applications like high‑speed switching, SMPS, and motor‑drive power supplies.
| Drain‑source Voltage (VDS) | 600 V |
|---|---|
| Gate‑source Voltage (VGS) | 30 V |
| Continuous Drain Current (Id) @ 25 °C | 7.2 A (STP7NB60) / 41 A (STP7NB60FP) |
| Typical On‑Resistance (RDS(on)) | 1.0 mΩ (STP7NB60) / 1.2 mΩ (STP7NB60FP) |
| Maximum Power Dissipation | 125 W (STP7NB60) / 40 W (STP7NB60FP) |
| Avalanche Current | 7.2 A |
The maximum drain‑source voltage is 600 V.
STP7NB60 is rated for 7.2 A, while STP7NB60FP is rated for 41 A.
Typical RDS(on) is 1.0 mΩ for STP7NB60 and 1.2 mΩ for STP7NB60FP.