TIP132 TIP135 TIP137 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications.
The TIP132 is a silicon epitaxial‑base NPN power transistor in a monolithic Darlington configuration, while TIP135 and TIP137 are the complementary PNP types. They are intended for use in linear and switching industrial equipment.
Key specifications include collector‑base voltage up to 60 V (NPN) or 100 V (PNP), collector current of 8 A, total power dissipation of 70 W at case temperature below 25 °C, and a junction‑case thermal resistance of 1.78 °C/W. Mechanical dimensions for the TO‑220 package are also listed.
| Collector‑Base Voltage (Vcso) | 60 V (NPN) / 100 V (PNP) |
|---|---|
| Collector‑Emitter Voltage (VcEo) | 60 V (NPN) / 100 V (PNP) |
| Collector Current (Ic) | 8 A |
| Total Power Dissipation (Prot) | 70 W at Tcase < 25 °C |
| Maximum Junction Temperature (Tj) | 150 °C |
| Height (A) of TO‑220 package | 4.40 mm min, 4.60 mm typ. |
The TIP132 can handle a collector current of up to 8 A.
The device can dissipate up to 70 W when the case temperature is below 25 °C.
For the NPN TIP132 the rating is 60 V, while the PNP TIP135 and TIP137 are rated at 100 V.