This document introduces the N-channel 75V power MOSFETs P75NF75, STB75NF75, STP75NF75, and STP75NF75FP produced by STMicroelectronics. This series of products adopts STMicroelectronics' unique STripFET™ process, which has the characteristics of low input capacitance and gate charge, and is suitable for applications such as high-efficiency, high-frequency isolated DC-DC converters, solenoid and relay drivers.
This datasheet provides the electrical ratings, characteristic curves, and mechanical data for the STB75NF75, STP75NF75 and STP75NF75FP N‑channel power MOSFET series. The devices are designed with ST’s STripFET™ process to achieve low input capacitance and gate charge, making them suitable for high‑efficiency, high‑frequency DC‑DC converters and other switching applications.
Key sections include absolute maximum ratings, on‑state resistance, switching times, thermal resistance, and package information for DPAK, TO‑220 and TO‑220FP formats. Revision history and legal notices are also included.
| Drain‑source voltage (Vds) | 75 V |
|---|---|
| Continuous drain current at 25 °C (Id) | 80 A |
| Total dissipation at 25 °C (Pd) | 300 W (DPAK) / 45 W (TO‑220FP) |
| Thermal resistance junction‑case (Rjc) | 0.5 °C/W (DPAK) |
The MOSFETs are rated for a maximum drain‑source voltage of 75 V.
The device can conduct up to 80 A continuously at 25 °C.
The series is offered in DPAK, TO‑220 and TO‑220FP packages.