STP7NB30 is a high-performance N-channel MOSFET designed by STMicroelectronics with a typical RDS(on) of 0.75 ohms, exceptional avalanche and dv/dt capabilities, 100% avalanche tested, very low intrinsic capacitances and minimized gate charge. Applications include high current, high speed switching, switch mode power supplies (SMPS), welding equipment and uninterrupted power supplies and motor drives.
The STP7NB30 and STP7NB30FP are high‑voltage, low‑on‑resistance MOSFETs offered in TO‑220 and TO‑220FP packages. They feature a 300 V drain‑source rating, very low intrinsic capacitances, and an avalanche‑tested design for reliable high‑speed switching in applications such as SMPS, welding converters and motor drives.
The document provides absolute maximum ratings, detailed thermal data, avalanche characteristics, electrical parameters (including on‑resistance, gate charge and switching times), and mechanical dimensions for both package types. Legal notices and STMicroelectronics trademark information conclude the sheet.
| Avalanche current (IAval) | 7 A |
|---|---|
| Storage temperature range | -65 °C to 150 °C |
| Maximum junction temperature (Tj) | 150 °C |