TIP122FP and TIP127FP are complementary silicon power Darlington transistors produced by STMicroelectronics. They come in a fully insulated package and are suitable for power linear and switching applications.
The TIP122FP is a silicon epitaxial‑base NPN Darlington power transistor mounted in a fully insulated TO‑220FP package, while the complementary TIP127FP is a PNP type. Both are intended for linear and switching power applications and feature a fully molded isolated package for easy mounting.
The document lists absolute maximum ratings such as 100 V collector‑emitter voltage and 5 A continuous collector current, a total power dissipation of 29 W, and thermal resistance of 4.3 °C/W. Mechanical dimensions of the TO‑220FP package are also provided, along with storage temperature limits from –65 °C to 150 °C.
| Collector‑Emitter Voltage (Vceo) | 100 V |
|---|---|
| Collector Current (Ic) | 5 A |
| Collector Peak Current (Iom) | 8 A |
| Total Power Dissipation (Pd) | 29 W |
| Junction‑Case Thermal Resistance (Rθjc) | 4.3 °C/W |
| Package Dimension A (min) | 4.4 mm |
| Storage Temperature Range | -65 °C to 150 °C |
The maximum continuous collector current is 5 A.
The device can withstand up to 100 V between collector and emitter.
They can be stored from –65 °C up to 150 °C.
The PNP type uses the same magnitude values, but the signs are negative.