TIP122FP TIP127FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully molded isolated package. It is intented for use in power linear and switching applications.
The TIP122FP (NPN) and TIP127FP (PNP) are complementary silicon Darlington power transistors offered in a fully insulated JEDEC TO‑220FP package. They are intended for use in power linear and switching applications.
The document lists absolute maximum ratings, electrical characteristics, thermal data, mechanical dimensions and safety notes. Key parameters include a 100 V collector‑emitter voltage, 5 A continuous collector current, 29 W total dissipation, and a junction‑to‑case thermal resistance of 4.3 °C/W. Mechanical drawings give the package dimensions for accurate PCB layout.
| Collector‑Emitter Voltage (Vceo) | 100 V |
|---|---|
| Collector Current (Ic) | 5 A |
| Total Dissipation (Prot) | 29 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 4.3 °C/W |
| Package Type | JEDEC TO‑220FP fully molded isolated package |
| Package Dimension A (length) | 4.4 mm min / 4.6 mm typ |
The TIP122FP can handle a continuous collector current of 5 A.
It is mounted in a JEDEC TO‑220FP fully molded isolated package.
Both TIP122FP and TIP127FP have a maximum collector‑emitter voltage of 100 V.
For the PNP type, voltage and current values are negative.