M54566P and M54566FP are seven-circuit collector-current- synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
The Mitsubishi M54566P/FP is a 7‑unit Darlington transistor array offering up to 400 mA per circuit and a 50 V collector‑emitter breakdown voltage. It features active L‑level inputs and operates over a wide temperature range, making it suitable for high‑current drive systems such as relays, printers, and MOS‑bipolar logic interfaces.
The datasheet provides detailed electrical characteristics, recommended operating conditions, pin configuration, absolute maximum ratings, and characteristic curves for both the P and FP package versions, including power dissipation and thermal derating data.
| Breakdown voltage (BVcEo) | 50 V |
|---|---|
| Maximum collector current (Ic max) | 400 mA |
| Supply voltage (Vcc) recommended range | 4 V – 8 V |
| Operating temperature range | ‑20 °C to +75 °C |
| Storage temperature range | ‑55 °C to +125 °C |
| Package type | 16P2N-A(FP) |
The maximum collector current is 400 mA per circuit.
The collector‑emitter breakdown voltage is 50 V.
The M54566FP version is housed in a molded small flat package, type 16P2N-A(FP).
The recommended supply voltage range is 4 V to 8 V.